Target materials are primarily classified by material into metal targets (such as copper, aluminum, and titanium), alloy targets (such as copper-manganese alloys), and ceramic targets (such as indium tin oxide (ITO)).
Metal targets are primarily composed of ultra-high-purity elemental metals, including aluminum (Al), copper (Cu), titanium (Ti), and tantalum (Ta). Aluminum targets are used for conductive layers in processes above 110nm, while copper targets are used for interconnect layers in advanced processes below 110nm due to their superior conductivity. In barrier layers, tantalum targets effectively prevent metal atomic diffusion due to their high melting point and strong chemical stability.
Alloy targets, such as nickel-chromium (NiCr) and cobalt-tungsten (CoW), are used in contact layers or specific functional layers to optimize the resistivity and thermal stability of thin films.
Ceramic compound targets include oxides (such as indium tin oxide (ITO), silicides, and carbides. They are primarily used in barrier layers (such as TaN) or insulating layers to prevent metal diffusion and improve device reliability. As processes advance to smaller sizes, requirements for target purity, structural uniformity, and grain size control increase exponentially. Future 3nm and higher processes will impose even more stringent target quality requirements, driving continuous innovation and upgrades to target technology.
Sputtering target classification
Classification by shape: round targets, plate targets, tube targets
Classification by chemical composition:
·Metal targets (pure metal aluminum, titanium, copper, tantalum, etc.)
·Alloy targets (nickel-chromium alloy, nickel-cobalt alloy, etc.)
·Ceramic compound targets (oxides, silicides, carbides, sulfides, etc.)
Classification by application: Semiconductor chip targets, flat panel display targets, solar cell targets, information storage targets, tool modification targets, electronic device targets, other targets
