Wire Cut Precision Pure Tantalum Disc

Wire Cut Precision Pure Tantalum Disc
Details:
Product Name:Wire Cut Precision Pure Tantalum Disc
Grade:Ta1/Ta2 etc
Chemical Composition%:
Ta1: Ta:99.99%,O:0.015,Fe:0.005,Ti:0.002,W:0.010,Mo:0.010,Si:0.005,Ni:0.002
Ta2: Ta:99.7%,O:0.030,Fe:0.030,Ti:0.005,W:0.040,Mo:0.030,Si:0.020,Ni:0.005
Available Size:D:φ20 mm - φ400mm,T:0.5-25mm etc
MOQ:10kg
Payment:100% T/T before shipment for small order, 30% in advance, balance should be paid before shipping for large order.
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Description
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Wire Cut Precision Pure Tantalum Disc

 

Wire Cut Ta1 Disc

    In modern semiconductor chip manufacturing, very large-scale integrated circuit (VLSI) barrier layer deposition, high-precision PVD magnetron sputtering target substrates, and highly corrosive media (such as boiling concentrated sulfuric acid, water king, high-concentration hydrochloric acid) seals, There are almost strict requirements for the perpendicularity tolerance, edge-free burr control, surface flatness and material purity of circular metal sheets.

    As shown in the figure, our high-performance Wire EDM Cut Pure Tantalum Discs strictly uses 100% high-vacuum electron beam (EB) smelted high-purity ASTM B708 R05200/Ta1 pure tantalum (purity ≥ 99. 95%) as the base material. Through large deformation multi-pass cold rolling and precision annealing to control the micro-structure particle size, combined with high-precision slow-moving wire cutting (Wire EDM) and double-sided grinding/ polishing process, it is ensured that the side notches of the wafer are flat and vertical, and there is no delamination and edge collapse. And the geometric size is accurate, providing extremely reliable basic raw materials and processed parts for European and American high-end manufacturing customers.

I. Excellent core advantages (Elite Engineering Advantages)

    High-precision low-speed Wire Cutting, vertical edge without burrs: Combined with the details of the side cuts in the figure, we use low-speed Wire Cutting (Wire Cutting) technology for circumference forming, with high perpendicularity of the cross section, which greatly avoids The edge hardening, microscopic cracks and flanging problems caused by stamping or gas cutting can be directly used for high-precision assembly or target binding (Bonding).

    Excellent dimensional flatness and same roundness tolerance: As shown in the figure, the product provides precise card control in various diameters (such as φ 50 mm -φ 300 mm above). After precise leveling and surface grinding, the flatness is controlled within ≤ 0.5%, which greatly increases the risk of thermal stress warpage when used under high temperature and vacuum.

    High-purity matrix and grain size control: the purity is as high as ≥ 99. 95%, and the interstitial elements (oxygen, nitrogen, hydrogen, carbon) are capped and stuck, effectively preventing high-temperature embrittlement. The internal microscopic grain distribution is uniform, and it can ensure extremely high film deposition rate and coating uniformity when it is used as a sputtering target blank.

II. Core technical parameters and chemical composition matrix (Technical Parameter & Chemistry Matrix)

    In order to meet the strict traceability standards of client, the core technical parameters are sorted out as follows:

 

Technical Parameter & Chemistry Matrix
Dimensions Technical Specifications & Matrix
Basic Info
Material Grade R05200 (unalloyed high-purity vacuum electron beam smelting pure tantalum | purity ≥ 99. 95%); Optional R05400
Standards ASTM B708 (Standard Specification for Tantalum and Tantalum Alloy Plate, Strip, Sheet)
Fabrication Electron beam smelting → multi-pass cold rolling → Wire EDM → grinding/polishing
Surface Finish Machined/Ground Finish, Polished or Cleaned
Specifications Supports CAD/drawing customization (Custom Sizes Available) for various non-standard diameters and thicknesses
Diameter φ 20 mm-φ 400 mm (high-precision card control according to the drawing)
Thickness 0.5 mm- 25.0 mm Customized
Tolerance Diameter tolerance: ± 0.1 mm (limit up to ± 0.05 mm); Tolerance for thickness: ± 0. 05 mm
Mechanical Properties (Annealed State) Standard mechanical properties at room temperature of 20 °C
Tensile Strength ≥ 205 MPa - 380 MPa (flexible adjustment with processing thickness and annealing state)
Yield Strength ≥ 140 MPa
Elongation ≥ 25%-30% (excellent cold working plasticity and toughness)
Chemistry % Purity 99.95%, and the interstitial elements and transition metal impurities are strictly limited
Ta (Matrix Purity) ≥ 99.95%(minus associated impurity elements such as niobium)
Nb (Impurity Control) ≤ 0.05 %
Fe|Ni|Cr Fe ≤ 0.005%|Ni ≤ 0.002%|Cr ≤ 0.002%
W|Mo|Ti W ≤ 0.01%|Mo ≤ 0.01%|Ti ≤ 0.002%
O|N|H O ≤ 0.015%|N ≤ 0.01%|H ≤ 0.0015% (within 15 ppm)

 

III. Lean production process and surface treatment (Manufacturing Process)

    EB smelting and cold rolling: Repeated high-vacuum electron beam (EB) smelting is used to purify high-purity tantalum ingots to ensure that there is no gas inclusion. Subsequently, the grain size is refined and the internal orientation anisotropy is eliminated through large deformation amount cold rolling and cross rolling.

    Precision Wire EDM (Precision Wire EDM): Fix the pure tantalum plate with high flatness on the CNC wire cutting platform, and use copper wire/tungsten wire slow wire to cut into circles, as shown in the figure, ensuring that the roundness tolerance is very small and the end face is clean.

    Double-sided precision grinding and polishing: use a flat finish grinder to thin and grind the cut tantalum wafer on both sides to eliminate the micro-electric erosion layer left by wire cutting, so that it presents a smooth and fine radial surface as shown in the figure. Grinding texture surface.

    Ultrasonic cleaning and vacuum packaging: After multi-pass solvent degreasing and ultrasonic pure water cleaning, anti-pressure and anti-scratch protection packaging is carried out immediately after drying to ensure that the products delivered to European and American customers are in a high-cleanliness state without oil, oxidation, and scratches.

IV. Cross-border cutting-edge applications (High-Value Market Applications)

    Semiconductor and PVD Sputtering Target Blanks (Sputtering Target Blanks): as sputtering target binding substrates or target blanks in high-purity semiconductor thin film deposition (such as TaN barrier layers).

    Vacuum high-temperature furnace and heating element heat insulation sheets (UHV Furnace Shields): In high-temperature vacuum furnaces or single crystal growth thermal fields, as end heat insulation screens, reflective discs and load-bearing trays.

    Seals and valves (Corsive Process Valves & Seals): gaskets, valves and rupture disks (Rupture Discs) used as extreme acid resistance in strong acid reactors and corrosion-resistant valves

Customized Ta1 Plate
 
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+86-182 9270 2722

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